Energy Dissipation in Monolayer MoS2 Electronics

Emerging photoluminescence in monolayer MoS2.

Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quan...

Large-Area Epitaxial Monolayer MoS2

Two-dimensional semiconductors such as MoS2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics, and energy harvesting. Large-area growth methods are needed to open the way to applications. Control over lattice orientation during growth remains a challenge. This is needed to minimize or even avoid the formation of grain boundaries, detrimenta...

Mechanically modulated tunneling resistance in monolayer MoS2

Low-temperature photocarrier dynamics in monolayer MoS2

Related Articles Diamondoid coating enables disruptive approach for chemical and magnetic imaging with 10nm spatial resolution Appl. Phys. Lett. 101, 163101 (2012) Monte Carlo simulation of thermal conductivity of Si nanowire: An investigation on the phonon confinement effect on the thermal transport J. Appl. Phys. 112, 074323 (2012) Effects of excess tellurium and growth parameters on the band...

Trion-induced negative photoconductivity in monolayer MoS2.

Optical excitation typically enhances electrical conduction and low-frequency radiation absorption in semiconductors. We, however, observe a pronounced transient decrease of conductivity in doped monolayer molybdenum disulfide (MoS(2)), a two-dimensional (2D) semiconductor, using ultrafast optical-pump terahertz-probe spectroscopy. In particular, the conductivity is reduced to only 30% of its e...